发明名称 THERMOELECTRIC SEMICONDUCTOR DEVICE UNIT AND METHOD OF MANUFACTURING THEREOF
摘要 <p>The present invention relates to a method of manufacturing a thermoelectric semiconductor device unit, the method including: pressing and adhering a heat radiation surface of a thermoelectric semiconductor device to one side of a heat sink with a first adhesive; mounting a cool block to the heat radiation surface of the thermoelectric semiconductor device after applying the first adhesive to at least one of the heat radiation surface and an adhesive surface of the cool block so that the heat radiation surface and the adhesive surface are adhered and settled; adhering the heat sink and a contact surface of a housing with a second adhesive so that the thermoelectric semiconductor device and the cool block are accommodated and settled in an accommodating space of the housing; adhering the housing and the cool block by filling the second adhesive in a gap formed between the accommodating space of the housing and the cool block; putting a unit- type assembly formed by the assembling processes into a drying chamber, and heating the assembly to dry the respective second adhesives between the heat sink and the housing and between the housing and the cool block, in which air staying in the accommodating space of the housing is heated by heat transfer of the heat sink and the cool block and passes through the second adhesive filled between the housing and the cool block so that moisture is evaporated through the second adhesive and then the second adhesive is cured in a sealed state to drying an inside of the accommodating space; and cooling the dried unit-type assembly. Thus, the inside of the accommodating space is dried, thereby preventing condensation around the thermoelectric semiconductor device due to temperature changes.</p>
申请公布号 WO2008150066(A1) 申请公布日期 2008.12.11
申请号 WO2008KR02382 申请日期 2008.04.25
申请人 COOLSURF CO., LTD.;JUNG, SE JIN 发明人 JUNG, SE JIN
分类号 H01L35/32 主分类号 H01L35/32
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