| 摘要 |
An image sensor and a fabricating method thereof are provided. A pixel area and a peripheral circuit area can have a step difference on a semiconductor substrate. A Complimentary Metal Oxide Semiconductor (CMOS) circuit can be provided on the pixel area, and an interlayer dielectric layer can be provided on the pixel area and the peripheral circuit area. A photodiode can be provided on the interlayer dielectric layer of the pixel area such that the top of the photodiode, or an intrinsic layer of the photodiode, is about even with the top of the interlayer dielectric layer of the peripheral circuit area.
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