| 摘要 |
A method of fabricating a non-volatile memory is provided. A memory cell array having first memory units and second memory units is formed on a substrate. Then, a source region and a drain region are formed in the substrate on the respective sides of the memory cell array. Next, a patterned first inter-layer insulating layer is formed on the substrate to form a first trench and a number of second trenches. A conductive layer is formed on the substrate to form a source line in the first trench and conductive lines in the second trenches. A second inter-layer insulating layer is formed on the substrate and then a conductive plug having contact with the drain region is formed in the second inter-layer insulating layer and the first inter-layer insulating layer. Then, a bit line having contact with the conductive plug is formed on the second inter-layer insulating layer.
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