SEMICONDUCTOR DEVICES WITH LAYERS HAVING EXTENDED PERIMETERS FOR IMPROVED COOLING AND METHODS FOR COOLING SEMICONDUCTOR DEVICES

摘要

A semiconductor device is provided, and includes a wafer having first and second opposed metallized major faces and a transistor bonded to the first metallized face of the wafer. The transistor includes a first surface, and the first surface defines a first area. The device further includes a first metal layer bonded to the first surface of the transistor. The first metal layer has a first surface that defines a second area larger than the first area of the transistor. The device further includes a ceramic layer bonded to the first surface of the first metal layer.