THIN FILM TRANSISTOR AND METHOD OF MANUFACTURING THE SAME

摘要

A thin film transistor and a method of manufacturing the same are provided to improve the productivity while decreasing the manufacturing cost. A thin film transistor comprises a gate electrode, a gate isolation layer(300), an active layer(400), and a source and a drain electrodes(700). The gate electrode is overlapped with a channel region of the active layer. A gate isolation layer is provided between the gate electrode and active layer. The source and the drain electrodes are overlapped with the source and the drain region of the active layer. A SiNx or a SiOxYy thin film for tunneling electron is provided source and drain electrodes, and the active layer.