发明名称 CHARGE PUMP CIRCUIT AND NONVOLATILE MEMORY
摘要 A charge pump circuit and nonvolatile memory is provided to suppress output voltage regardless of a temperature change by generating a voltage as much as a dropped voltage on a charge transfer device. A charge pump circuit includes a constant-currents circuit, a charge transfer device generating a compensating voltage by the constant current, and a constant voltage circuit(12) generating a constant voltage. A buffer amplifier(11) outputs an input voltage by adding compensating voltage and a constant voltage. A plurality of charge transfer devices is serially connected to the output terminal of the buffer amplifier. A plurality of capacitors(C1 - C3, CL) are connected to a contact of each charge transfer device.
申请公布号 KR20080108023(A) 申请公布日期 2008.12.11
申请号 KR20080052605 申请日期 2008.06.04
申请人 SEIKO INSTRUMENTS INC. 发明人 KAWASHIMA NAN
分类号 G11C5/14;G11C7/22 主分类号 G11C5/14
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