| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a phase change memory device for reducing the contact region of a phase change memory layer and an electrode and increasing integration effect, and to provide a method for manufacturing the same. <P>SOLUTION: The phase change memory device 100 includes an array of phase change memory cells. Each phase change memory cell includes a selecting MOS transistor disposed on a substrate 110. An upright electrode structure 135 is electrically connected to the transistor through a conductive plug 130. An upright phase change memory layer 140 is stacked on the upright electrode structure 135 with a contact area 145, wherein the contact area 145 serves as a phase transition location. By introducing upright heating electrodes 135 and upright phase change memory layers 140, minimum contact area can be achieved, and operation currents can be further reduced. <P>COPYRIGHT: (C)2009,JPO&INPIT |
