发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor integrated circuit, having a test pad control circuit for so performing a breakdown voltage that relaxes the control so that the interference due to high voltage will not occur, by checking the state of high voltage when it is selected and when it is non-selected. SOLUTION: This semiconductor integrated circuit comprises a first switch transistor 10 connected to an internal high-voltage power; a second switch transistor 17 connected to a pad; a first switch control circuit 30-1 turning on the first switch transistor 10 by a control signal and relieving the voltage, applied to the transistor circuit held therein by a first detection signal indicating that the internal high-voltage power exceeds a predetermined voltage; a second switch control circuit 30-2, turning on the second switch transistor 15 by a control signal and relieving the voltage applied to the transistor circuit held therein by a second detection signal, indicating that the voltage applied to the pad exceeds a predetermined voltage; and a level detection circuit 20, generating the second detection signal when the voltage applied to the pad exceeds the predetermined voltage. COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2008298630(A) 申请公布日期 2008.12.11
申请号 JP20070145907 申请日期 2007.05.31
申请人 SAMSUNG ELECTRONICS CO LTD 发明人 SUDO NAOAKI
分类号 G01R31/28;H01L21/822;H01L27/04 主分类号 G01R31/28
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