| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for producing a silicon single crystal where the procurement of raw materials is inexpensively and stably performed and where high quality silicon single crystal with low concentration of impurities can be produced. SOLUTION: Silicon blocks 8 remained in crucibles which cannot be used as a raw material for producing a silicon single crystal are charged in a quartz crucible 1a (a), and the remained silicon blocks 8 are melted (b). A raw material silicon ingot 10 is pulled ((c) and (d)) from a molten liquid 9 by a CZ method. A remained molten liquid 9a in the quartz crucible 1a is discharged (e). A silicon raw material 11 usually used for producing a silicon single crystal is charged in the quartz crucible 1a and melted (f). The raw material silicon ingot 10 is hung, supported, supplied from upward into an initial silicon molten liquid and melted and a seed crystal 7 holding the raw material silicon ingot 10 waits at around the surface of the silicon molten liquid 3 (g). The seed crystal 7 is dipped and then the silicon single crystal 4 is pulled from the silicon molten liquid 3 ((h) and (i)). COPYRIGHT: (C)2009,JPO&INPIT
|
