发明名称 |
ISOLATION STRUCTURE FOR IMAGE SENSOR DEVICE |
摘要 |
Provided is an image sensor device including a substrate with a pixel region and a peripheral region. A first isolation structure is formed on the substrate in the pixel region. The first isolation structure includes a trench having a first depth. A second isolation structure is formed on the substrate in the peripheral region. The second isolation structure includes a trench having a second depth. The first depth is greater than the second depth.
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申请公布号 |
US2008303932(A1) |
申请公布日期 |
2008.12.11 |
申请号 |
US20080120019 |
申请日期 |
2008.05.13 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD |
发明人 |
WANG WEN-DE;LIU JEN-CHENG;YAUNG DUN-NIAN;CHUANG CHUN-CHIEH;HUNG JYH-MING |
分类号 |
H04N5/335 |
主分类号 |
H04N5/335 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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