发明名称 RFID DEVICE HAVING NONVOLATILE FERROELECTRIC MEMORY DEVICE
摘要 A RFID device has a nonvolatile ferroelectric memory including a memory cell array area supplied only with a high voltage and a peripheral area supplied with a low voltage, thereby reducing power consumption. The RFID device includes an antenna adapted and configured to transceive a radio frequency signal from an external communication apparatus, an analog block adapted and configured to generate a power voltage in response to the radio frequency signal received from the antenna, a digital block adapted and configured to receive the power voltage from the analog block, transmit a response signal to the analog block and output a memory control signal, and a memory adapted and configured to generate a high voltage with the power voltage and access data in response to the memory control signal.
申请公布号 US2008303641(A1) 申请公布日期 2008.12.11
申请号 US20080178452 申请日期 2008.07.23
申请人 HYNIX SEMICONDUCTOR INC. 发明人 KANG HEE BOK;AHN JIN HONG
分类号 H04Q5/22 主分类号 H04Q5/22
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