发明名称 |
Semiconductor device having P-N column layer and method for manufacturing the same |
摘要 |
A semiconductor device is provided, which includes a substrate; a P-N column layer disposed on the substrate; a second conductivity type epitaxial layer disposed on the P-N column layer. The P-N column layer includes first conductivity type columns and second conductivity type columns, which are alternately arranged. Each column has a tapered shape. A portion of the first conductivity type column located around the substrate has a smaller impurity concentration than another portion of the first conductivity type column located around the second conductivity type epitaxial layer. A portion of the second conductivity type column located around the substrate has a larger impurity concentration than another portion of the first conductivity type column located around the second conductivity type epitaxial layer.
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申请公布号 |
US2008303114(A1) |
申请公布日期 |
2008.12.11 |
申请号 |
US20080155485 |
申请日期 |
2008.06.05 |
申请人 |
DENSO CORPORATION;SUMCO CORPORATION |
发明人 |
SHIBATA TAKUMI;YAMAUCHI SHOUICHI;NOGAMI SYOUJI;YAMAOKA TOMONORI |
分类号 |
H01L29/06;H01L21/761 |
主分类号 |
H01L29/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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