MEMORY CELL AND METHOD OF PROGRAMMING THE SAME

摘要

A method of programming a memory cell is described. The memory cell includes a gate with a charge trapping layer isolated from a substrate for storing data with a first region and a second region separated from the first region. The method of programming the memory cell includes applying a first voltage arrangement with a first gate voltage for programming the first region and applying a second voltage arrangement with a second gate voltage for programming the second region. The first gate voltage is greater than the second gate voltage.