PARTIALLY FABRICATED ITEM OF SEMICONDUCTOR DEVICE, AND METHOD FOR CRYSTALLIZING AMORPHOUS SEMICONDUCTOR LAYER OF IT

摘要

PROBLEM TO BE SOLVED: To provide a partially fabricated item of a semiconductor device, for improving the electric characteristics of the semiconductor device, and a method for crystallizing the semiconductor layer of it. SOLUTION: The method for crystallizing the amorphous semiconductor layer of the partially fabricated item of the semiconductor device includes a process where laser light with radiation intensity distribution having temperature gradient is radiated as laser light for crystallization, to the amorphous semiconductor layer through a insulating layer and a nitrogen-containing layer; a process where the nitrogen-containing layer absorbs at least a part of the incident laser beam and storing the heat; a process where the laser beam of the radiation intensity distribution having the temperature gradient is radiated to a region of the amorphous semiconductor layer to melt the region; a process where the heat stored in the thermal storage process acts as a heat source to reduce cooling rate at the time of cooling after melting; a process where the laser light radiation process is performed twice or more. COPYRIGHT: (C)2009,JPO&INPIT