发明名称 Thin film capacitor and fabrication method thereof
摘要 A thin film capacitor comprising a top electrode, a bottom electrode, and a dielectric film held between the top and bottom electrodes. The dielectric film is composed of at least cations Ba, Sr, and Ti and anion O. The concentration of Sr, Ti, and O ions are uniform along the growth direction of the dielectric film while the concentration of the Ba cation is non-uniform along the growth direction such that a reduced Ba-I region in which the average concentration of perovskite type Ba cations (Ba-I) is less than the average concentration of non-perovskite type Ba cations (Ba-II) exists at or near the boundary between at least one of the top and bottom electrodes, with ratio R=(atm % Ba-I)/[(atm % Ba-I)+(atm % Ba-II)] within a range of 0.1<R<0.2.
申请公布号 US2008305607(A1) 申请公布日期 2008.12.11
申请号 US20080219577 申请日期 2008.07.24
申请人 FUJITSU LIMITED 发明人 BANIECKI JOHN DAVID;SHIOGA TAKESHI;KURIHARA KAZUAKI
分类号 H01L21/20 主分类号 H01L21/20
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