VARIABLE RESISTANCE ELEMENT AND SEMICONDUCTOR DEVICE COMPRISING THE SAME

摘要

Disclosed is a variable resistance element comprising a first electrode, a variable resistance material layer formed on the first electrode, and a second electrode formed on the variable resistance material layer. The variable resistance material layer is made of a non-crystallized material wherein a transition metal oxide, which is an oxide of a transition metal M1, contains an oxide of a non-transition metal element M2.