发明名称 |
TREATING DEVICE OF INDUCTIVELY COUPLED PLASMA |
摘要 |
An antenna for an inductively coupled plasma processing device using a ferrite is provided to generate uniform plasma with a large size by maximizing the size of an internal electric field as a ferrite antenna. An inductively coupled plasma processing device includes a first antenna(100), and a second antenna. The first antenna generates the inductively coupled plasma. The second antenna includes a ferrite(110) and a conductive line(120) formed in a circumference of the ferrite. The first antenna is equipped in the center. The second antenna is equipped in the circumference of the first antenna. |
申请公布号 |
KR20080107759(A) |
申请公布日期 |
2008.12.11 |
申请号 |
KR20070055961 |
申请日期 |
2007.06.08 |
申请人 |
CHARM & CI CO., LTD. |
发明人 |
KIM, YOUNG YUL;CHO, GUK HYEONG;LEE, KWAN JAE;JUNG, JIN WOOK |
分类号 |
H05H1/34;H01L21/3065 |
主分类号 |
H05H1/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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