发明名称 TREATING DEVICE OF INDUCTIVELY COUPLED PLASMA
摘要 An antenna for an inductively coupled plasma processing device using a ferrite is provided to generate uniform plasma with a large size by maximizing the size of an internal electric field as a ferrite antenna. An inductively coupled plasma processing device includes a first antenna(100), and a second antenna. The first antenna generates the inductively coupled plasma. The second antenna includes a ferrite(110) and a conductive line(120) formed in a circumference of the ferrite. The first antenna is equipped in the center. The second antenna is equipped in the circumference of the first antenna.
申请公布号 KR20080107759(A) 申请公布日期 2008.12.11
申请号 KR20070055961 申请日期 2007.06.08
申请人 CHARM & CI CO., LTD. 发明人 KIM, YOUNG YUL;CHO, GUK HYEONG;LEE, KWAN JAE;JUNG, JIN WOOK
分类号 H05H1/34;H01L21/3065 主分类号 H05H1/34
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