SUBSTRATE FOR PRODUCING GROUP III NITRIDE-BASED COMPOUND SEMICONDUCTOR AND ITS PRODUCTION METHOD

摘要

PROBLEM TO BE SOLVED: To provide a substrate for producing a group III nitride-based compound semiconductor, with which the group III nitride-based compound semiconductor can be easily produced at a low cost; and to provide a method for producing the same.

SOLUTION: The method for producing the substrate for producing the group III nitride-based compound semiconductor is characterized by forming a nitrogen plasma having a kinetic energy of ≤100 eV by using nitrogen gas as single substance or nitrogen gas containing Ar gas having a purity of ≥99.9%, then forming a metal nitride layer comprising an Al-nitride layer and having a thickness of ≤10 nm by irradiating the surface of a sapphire base material having a surface roughness Ra of ≤0.2 nm with the nitrogen plasma, and heat treating the sapphire base material having the metal nitride layer.

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