METHOD OF DETERMINING ETCHING AMOUNT OF SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method of determining an etching amount of a semiconductor device which can correctly define the etching amount by a simple procedure without spending a long time. SOLUTION: The method of determining the etching amount comprises steps of: forming a false electrode having a monitor having a plurality of step-like zones on a substrate; subsequently etching a primary zone and a secondary zone of the monitor simultaneously with an electrode of a test piece; defining the etching amount based on an exposed area of the substrate which appears at this time (first order determination); subsequently etching the secondary zone of the monitor simultaneously with the electrode; and defining the etching amount based on the exposed area of the substrate which appears at this time (final determination). COPYRIGHT: (C)2009,JPO&INPIT