| 摘要 |
PROBLEM TO BE SOLVED: To provide a ferroelectric capacitor for preventing a ferroelectric film from deteriorating, and to provide a manufacturing method of the ferroelectric capacitor. SOLUTION: The manufacturing method of a ferroelectric capacitor includes: a process for forming an upper contact hole 71 at the side of a bit line for exposing a lower plug 81 at the side of a bit line; a process for forming a first barrier conductive film 75 on an interlayer insulating film 7 and the lower plug 81 at the side of a bit line exposed in the upper contact hole 71 at the side of a bit line by film-forming a conductive material having oxygen barrier properties on the interlayer insulating film 7; a process for forming an opening 75a at a position corresponding to a charge storage section 5 in the first barrier conductive film 75; a process for forming an upper contact hole 72 at the side of a ground line for connecting the interlayer insulating film 7 to an upper electrode 53 by etching the interlayer insulating film 7 and a hydrogen barrier film 6 with the first barrier conductive film 75 as a mask; and a process for performing annealing treatment in an oxygen atmosphere after forming the upper contact hole 72 at the side of the ground line. COPYRIGHT: (C)2009,JPO&INPIT
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