| 摘要 |
In the bonding of conductor films each of a high-melting-point metal composed mainly of, for example, Cu, the time required for the bonding is shortened by the use of a low-melting-point metal composed mainly of, for example, Sn as a bonding material. A thermal bonding step is carried out in the situation that low-melting-point metal layers (16,18) each of a low-melting-point metal composed mainly of, for example, Sn are arranged so as to pinch in the direction of thickness a high-melting-point metal layer (17) of a high-melting-point metal composed mainly of, for example, Cu of the same type as the high-melting-point metal constituting first and second conductor films (13,14) to be bonded together. The distance for diffusion of the high-melting-point metal into each of the low-melting-point metal layers (16,18) so as to form an intermetallic compound between high-melting-point metal and low-melting-point metal can be reduced to thereby attain shortening of the time required for diffusion and hence shortening of the time required for bonding. |
