NONVOLATILE STORAGE ELEMENT, ITS MANUFACTURING METHOD, AND NONVOLATILE SEMICONDUCTOR DEVICE USING THE NONVOLATILE STORAGE ELEMENT

摘要

A nonvolatile storage element is provided with a first electrode layer (103), a second electrode layer (107), and a resistance change layer (106) that is interposed between the first electrode layer (103) and the second electrode layer (107) and has a resistance value which reversibly changes on the basis of electrical signals given between both electrodes (103) and (107). This resistance change layer (106) has a laminated structure in which a first tantalum-containing layer having a composition represented by TaOx (wherein, 0=x<2.5) and a second tantalum-containing layer having a composition represented by TaOy (wherein, x