METHOD FOR FORMING SILICON OXIDE FILM FOR SOI WAFER

摘要

Provided is a method for forming a silicon oxide film for an SOI wafer. In the method, the silicon oxide film is formed on the front surface of an SOI layer by performing at least the following steps. In a step (A), thermal oxidation treatment is performed to an SOI wafer having an oxide film on the rear surface, and in step (B), heat treatment is performed in non-oxidizing atmosphere at a temperature higher than that of the thermal oxidation process after the thermal oxidation treatment. Thus, even when an SOI wafer having a thick oxide film on the rear surface is used and a silicon oxide film is formed for device formation by thermal oxidation on the front surface on the SOI layer side, warping of the SOI wafer after the thermal oxidation treatment is suppressed, exposure failure and suction failure due to warping of the SOI wafer are reduced, and yield of device manufacture is improved.