FILM FORMING METHOD AND FILM FORMING APPARATUS

摘要

On a surface of a material to be processed, a Mn containing thin film or a CuMn containing alloy thin film is formed by heat treatment (CVD or ALD) by using a Mn containing material gas (or Mn containing material gas and a Cu containing gas) and an oxygen containing gas (for instance, water vapor) as a processing gas. The Mn containing thin film or the CuMn containing alloy thin film can be formed with a high step coverage in a fine recessed section formed on the surface of the material to be processed.