| 摘要 |
<p>Provided is a semiconductor device wherein on-resistance is remarkably reduced. The semiconductor device is provided with an n-type epitaxial layer (2) wherein each region between adjacent trenches (3) operates as a channel (9), and a plurality of embedded electrodes (5) each of which is formed on an inner surface of each trench (3) through a silicon oxide film (4). A current flowing each region between the adjacent trenches (3) is interrupted by blocking each region between the adjacent trenches (3) with all the depletion layers (10) formed at the peripheries of the trenches (3), and a current is permitted to flow through each region between the adjacent trenches (3) by eliminating all the depletion layers (10) formed at the peripheries of the trenches (3).</p> |
