| 摘要 |
FIELD: radio engineering. ^ SUBSTANCE: invention is related to radio engineering and may be used in production of thin-film resistors with precision characteristics. Material for production of thin-film resistors contains chrome, iron, aluminium, silicon dioxide. It additionally contains aluminium oxide at the following quantitative ratio of components, wt %: chrome - 3345; iron - 8.09.6; aluminium - 6.98.4; silicon dioxide - 29.435.9; titanium - 8.910.8; aluminium oxide - 1.92.3. Resistive material provides production of thin-film resistors with specific surface resistance from 100 Ohm to 400 Ohm and temperature coefficient of resistance (TKS)510-6 1/C with yield of proper resistors of 60-80%, and by TKS1010-6 1/C with yield of proper resistors of 95-100% in every produced batch in range of temperatures from 20 to 125C, and in range of temperatures from -60 to +20C it has more linear dependence of TKS on temperature, which is equal to 10-1510-6 1/C with stability for 2000 hours at nominal load of 0.01% at 85C. ^ EFFECT: improved characteristics of thin-film resistors. ^ 1 tbl |
