| 摘要 |
An organometallic compound field for the chemical vapor deposition or the atomic layer deposition of the thin film is respected to provide. A method for forming the metal-containing layer on the top of the substrate performs the following steps: a step for providing the substrate in the weather deposition reactor; a step for transporting to reactor to gas type different kind(heteroleptic) ligand formic amidinate compound including metal, and the formic amidate ligand and anionic ligand; and a step evaporating the film including the metal in the top of the substrate.
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