发明名称 |
LED chip production method |
摘要 |
An LED chip production method in which the sapphire substrate used in the process for formation of a nitride semiconductor can be easily and efficiently removed. The LED chip production method is a method for LED chips that has at least one nitride semiconductor layer. An LED chip structure assembly with a construction in which a nitride buffer layer is formed on the sapphire substrate and the at least one nitride semiconductor layer is formed on the nitride buffer layer which is then subjected to a chemical etching process to remove the nitride buffer layer, thereby facilitating removal of the sapphire substrate. |
申请公布号 |
EP2001059(A2) |
申请公布日期 |
2008.12.10 |
申请号 |
EP20080010061 |
申请日期 |
2008.06.02 |
申请人 |
USHIODENKI KABUSHIKI KAISHA |
发明人 |
IMAI, YUJI |
分类号 |
H01L33/12;H01L33/20;H01L33/32;H01L33/36 |
主分类号 |
H01L33/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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