发明名称 LED chip production method
摘要 An LED chip production method in which the sapphire substrate used in the process for formation of a nitride semiconductor can be easily and efficiently removed. The LED chip production method is a method for LED chips that has at least one nitride semiconductor layer. An LED chip structure assembly with a construction in which a nitride buffer layer is formed on the sapphire substrate and the at least one nitride semiconductor layer is formed on the nitride buffer layer which is then subjected to a chemical etching process to remove the nitride buffer layer, thereby facilitating removal of the sapphire substrate.
申请公布号 EP2001059(A2) 申请公布日期 2008.12.10
申请号 EP20080010061 申请日期 2008.06.02
申请人 USHIODENKI KABUSHIKI KAISHA 发明人 IMAI, YUJI
分类号 H01L33/12;H01L33/20;H01L33/32;H01L33/36 主分类号 H01L33/12
代理机构 代理人
主权项
地址