发明名称 |
FABRICATION METHOD OF NANOSTRUCTURE USING NANOPORE ARRAY |
摘要 |
A manufacturing method of a nanostructure is provided to remove selectively only an oxide of a conductive layer formed at a lower part of a nanopore and to expose a catalyst layer for grow a bottom electrode or a nanowire using a nanopore array. A manufacturing method of a nanostructure comprises steps of: forming in order a conductive layer(13) and an anodic oxide quality layer on a substrate; anodizing the anodic oxide quality layer and forming a plurality of nanopores; exposing the oxide of the conductive layer formed between a surface of the anodic oxide quality layer and a lower part of the oxide of the conductive layer space by removing the oxide of the anodic oxide quality layer formed at the lower part of nanopore; and exposing the conductive layer at a lower part of the nanopore by removing the oxide of the exposed conductive layer. |
申请公布号 |
KR20080107013(A) |
申请公布日期 |
2008.12.10 |
申请号 |
KR20070054762 |
申请日期 |
2007.06.05 |
申请人 |
SEOUL NATIONAL UNIVERSITY INDUSTRY FOUNDATION |
发明人 |
KIM, KI BUM;PARK, SANG HYUN |
分类号 |
B82B3/00 |
主分类号 |
B82B3/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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