发明名称
摘要 PROBLEM TO BE SOLVED: To provide a positive type resist composition having such good performance as not to cause development defects and good line edge roughness. SOLUTION: In the positive type resist composition containing (A) a compound which generates an acid when irradiated with active light or radiation, (B) a resin which is decomposed by the action of the acid and increases its solubility in an alkali developing solution, (C) an organic basic compound and (D) a fluorine- and/or silicon-containing surfactant, the resin (B) contains a hydroxystyrene/t-butyl acrylate copolymer (generally called ESCAP) and a copolymer obtained by introducing a styrene unit into ESCAP.
申请公布号 JP4194249(B2) 申请公布日期 2008.12.10
申请号 JP20010080895 申请日期 2001.03.21
申请人 发明人
分类号 G03F7/039;C08K5/16;C08K5/54;C08K5/541;C08L25/18;H01L21/027 主分类号 G03F7/039
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