PROCESS FOR FABRICATING A FIELD-EFFECT TRANSISTOR WITH SELF-ALIGNED GATES

摘要

The method involves forming a gate on an on-insulator semiconductor substrate, and depositing a hard layer (11) on the gate to act as an etching mask for defining a channel (2a) and a pad. A defining layer (17) is formed to define drain and source zones. An assembly of the gate and the hard layer is inverted and bonded to another substrate (20), and another gate is formed in a gate cavity (22) formed by a space defined by the pad. The defining layer is silicided, and a metal is deposited for producing metal source and drain electrodes.