发明名称 |
TRENCH DMOS TRANSISTOR STRUCTURE |
摘要 |
A trench DMOS transistor structure having a low resistance path to a drain contact located on an upper surface and methods of making the same. The transistor structure comprises: (1) a first region of semiconductor material of a first conductivity type; (2) a gate trench formed within the first region; (3) a layer of gate dielectric within the gate trench; (4) a gate electrode within the gate trench adjacent the layer of gate dielectric material; (5) a drain access trench formed within the first region; (6) a drain access region of conductive material located within the drain access trench; (7) a source region of the first conductivity type within the first region, the source region being at or near a top surface of the first region and adjacent to the gate trench; (8) a body region within the first region below the source region and adjacent to the gate trench, the body region having a second conductivity type opposite the first conductivity type; and (9) a second region of semiconductor material within the first region below the body region. The second region is of the first conductivity type and has a higher dopant concentration than the first semiconductor region. Moreover, the second region extends from the gate trench to the drain access trench and is self-aligned to both the gate trench and the drain access trench. |
申请公布号 |
EP1504473(A4) |
申请公布日期 |
2008.12.10 |
申请号 |
EP20030728855 |
申请日期 |
2003.05.13 |
申请人 |
GENERAL SEMICONDUCTOR, INC. |
发明人 |
BLANCHARD, RICHARD, A. |
分类号 |
H01L29/78;H01L21/336;H01L29/06;H01L29/08;H01L29/36;H01L29/417 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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