| 摘要 |
<p>A display device and a method for manufacturing the same are provided to reduce resistive leakage current in a bottom-gate TFT element including polycrystalline semiconductor. A semiconductor device includes an insulating substrate and a TFT element disposed on the substrate. The TFT element includes a gate electrode(2), a gate insulating film, a semiconductor layer, and a source electrode(601) and a drain electrode(602) arranged in that order on the insulating substrate. The semiconductor layer includes an active layer(4) composed of polycrystalline semiconductor and a contact layer segment interposed between the active layer and the source electrode and another contact layer segment interposed between the active layer and the drain electrode(602). The source and drain electrodes each have a first face facing the opposite face of the active layer from the interface with the gate insulating layer and a second face, facing an etched side face of the active layer.</p> |
