| 摘要 |
A plasma processing apparatus, an electrode temperature controlling apparatus, and an electrode temperature controlling method are provided to prevent the electrode temperature from rising due to the application of the high frequency power by overlapping the electrode applying the high frequency power with the DC voltage and applying the overlapped power. A plasma processing apparatus includes a process chamber, a first electrode, a second electrode, a first high frequency power source(141), a second high frequency power source, a DC power supply(142), a process gas supplying unit, and a temperature controlling unit, and a controller. The process chamber receives a substrate that is the object to be processed. The process chamber performs the vacuum-exhaust. The first electrode is arranged inside the process chamber. The second electrode is arranged to face the first electrode. The second electrode supports the substrate. The first high frequency power source applies the first high frequency power to the first electrode. The second high frequency power source applies the second high frequency power with the frequency lower than the first high frequency power to the second electrode. The DC power supply applies the DC voltage to the first electrode. The process gas supplying unit supplies the predetermined process gas to the process chamber. The temperature controlling unit controls the temperature of the first electrode by circulating the thermal medium controlled to the predetermined temperature in the circulation path formed in the first electrode. The controller controls the temperature of the thermal medium based on a target temperature when processing the substrate. |
