发明名称 Method for manufacturing an electrolyte pattern
摘要 A gel electrolyte pattern is formed by depositing an electrolyte precursor layer onto a gelling agent layer using an inkjet printing method. The electrolyte layer pattern is used in the fabrication of an electrolyte gated thin film transistor (TFT) which may be organic or inorganic or an electrochemical transistor (ECT).
申请公布号 GB2449926(A) 申请公布日期 2008.12.10
申请号 GB20070011074 申请日期 2007.06.08
申请人 SEIKO EPSON CORPORATION 发明人 THOMAS KUGLER
分类号 H01L51/56;H01L21/288;H01L51/10 主分类号 H01L51/56
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