| 发明名称 |
Integrated circuit device, method of manufacturing the same and method of forming vanadium oxide film |
| 摘要 |
A vanadium oxide film is formed on an interlayer insulating layer, and a silicon oxide film and a silicon nitride film are formed on the vanadium oxide film in this order. With a resist pattern used as a mask, the silicon nitride film is patterned. Then, the resist pattern is removed using a stripping solution or oxygen plasma ashing. Next, with the patterned silicon nitride film used as a mask, the silicon oxide film and the vanadium oxide film are etched to form a resistor film of vanadium oxide.
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| 申请公布号 |
US7462921(B2) |
申请公布日期 |
2008.12.09 |
| 申请号 |
US20050086743 |
申请日期 |
2005.03.23 |
| 申请人 |
NEC CORPORATION;NEC ELECTRONICS CORPORATION |
发明人 |
KAWAHARA NAOYOSHI;MURASE HIROSHI;OHKUBO HIROAKI;NAKASHIBA YASUTAKA;ODA NAOKI;SASAKI TOKUHITO;ITO NOBUKAZU |
| 分类号 |
H01L21/3065;H01L31/058;H01L21/00;H01L21/02;H01L21/316;H01L21/3213;H01L21/822;H01L21/8234;H01L23/522;H01L27/04;H01L29/00;H01L37/00;H01L47/00 |
主分类号 |
H01L21/3065 |
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