发明名称 |
Semiconductor memory device having a precharge control circuit for reducing current during continuous write operation |
摘要 |
We describe a semiconductor memory device having a precharge control circuit and an associated method for precharging the same. A semiconductor memory device having a series of circuits for writing data to memory cells includes an input and output line for transferring data to be written to each of the memory cells. A precharge control circuit is adapted to generate a precharge control signal for controlling a precharge disable state of the input and output line after application of a first write command. The disable state of the precharge control signal is maintained even after application of a second write command when performing a continuous write operation responsive to the second write command application without other commands applied subsequent to the first write command application. Avoiding precharging the input and output line in a continuous write operation, reduces current consumption.
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申请公布号 |
US7463538(B2) |
申请公布日期 |
2008.12.09 |
申请号 |
US20060350249 |
申请日期 |
2006.02.07 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
SHIN JUN-HO |
分类号 |
G11C7/00 |
主分类号 |
G11C7/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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