发明名称 Method and system for derivation of breakdown voltage for MOS integrated circuit devices
摘要 A method and system for multi-point (e.g., double-point) GOI test that can efficiently judge failure modes by testing only two points. We can measure leakage currents at only two voltages, which are the cut points of mode A-B and B-C, instead of the whole ramped voltages to save time and cost with the same test effectiveness according to a specific embodiment. By correlating leakage current at extrinsic field to the breakdown voltage, we can also evaluate the intrinsic reliability even if the samples are not subjected to actual breakdown according to a specific embodiment.
申请公布号 US7462497(B2) 申请公布日期 2008.12.09
申请号 US20050227012 申请日期 2005.09.14
申请人 SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION 发明人 ZHAO ATMAN;TSENG SUMMER;CHIEN W.T. KARY;GONG EXCIMER
分类号 H01L21/66 主分类号 H01L21/66
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