发明名称 Manufacturing method of active matrix substrate, active matrix substrate and liquid crystal display device
摘要 A method of manufacturing an active matrix substrate is provided that uses a technique of transferring a thin film device. In forming thin film transistors and pixel electrodes on an original substrate before transfer, an insulator film such as an interlayer insulation film or the like, is previously removed before the pixel electrodes are formed. Further, the original substrate is separated by exfoliation to transfer the device to a transfer material to cause the pixel electrodes to partially appear in the surface or the vicinity of the surface of the device. This portion permits application of a voltage to a liquid crystal through the pixel electrode.
申请公布号 USRE40601(E1) 申请公布日期 2008.12.09
申请号 US20030748206 申请日期 2003.12.31
申请人 SEIKO EPSON CORPORATION 发明人 INOUE SATOSHI;SHIMODA TATSUYA
分类号 H01L21/00;G02F1/1368;H01L21/762;H01L21/77;H01L21/84;H01L27/12 主分类号 H01L21/00
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