| 摘要 |
A memory device having a reduced-thickness phase change film is described along with methods for manufacture. The device includes an electrode element, in electrical contact with a phase change layer. The latter element is formed from a memory material having at least two solid phases. A top electrode element makes electrical contact with the phase change layer at a location remote from the contact location of the electrode element. This construction produces a current flow through the phase change element in which at least a portion thereof lies in a path transverse to the current flow path within the electrode element.
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