A MANUFACTURING METHOD USING A TOP COATING PATTERN AS A SUPPLEMENTARY ETCHING MASK
摘要
<p>A manufacturing method of the semiconductor device is provided to supplement the etch-resistant of the photoresist pattern in the subsequent etching process by partly remaining the top coating film on the photoresist pattern. A manufacturing method of the semiconductor device comprises the following processes. The photoresist film is formed on the semiconductor substrate(201). The top coating film containing photoresist is formed on the photoresist film. The top coating film and the photoresist film are exposed by using the dipping photolithography. The top coating film and the photoresist film are developed and the top coating pattern(209a') and the photoresist pattern(207a') are formed.</p>
申请公布号
KR20080106696(A)
申请公布日期
2008.12.09
申请号
KR20070054442
申请日期
2007.06.04
申请人
SAMSUNG ELECTRONICS CO., LTD.
发明人
KIM, KYOUNG MI;KIM, JAE HO;KIM, YOUNG HO;PARK, MI RA