发明名称 |
Nonvolatile semiconductor storage device |
摘要 |
A nonvolatile memory device of the present invention performs a programming operation by accumulating a charge in certain capacitance which is provided for each programming memory cell and injecting hot electrons generated when the charge is discharged via the memory cell into a floating gate. Thus, a variation in a programming characteristic of the nonvolatile semiconductor memory device is reduced, thereby realizing high-speed programming operation.
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申请公布号 |
US7463533(B2) |
申请公布日期 |
2008.12.09 |
申请号 |
US20060605245 |
申请日期 |
2006.11.29 |
申请人 |
RENESAS TECHNOLOGY CORP.;HITACHI DEVICE ENG;HITACHI ULSI SYS CO LTD |
发明人 |
KURATA HIDEAKI;KOBAYASHI NAOKI;SAEKI SHUNICHI;KOBAYASHI TAKASHI;KAWAHARA TAKAYUKI;TAKASE YOSHINORI;YOSHIDA KEIICHI;KANAMITSU MICHITARO;KUBONO SHOJI;NOZOE ATSUSHI |
分类号 |
G11C11/34;G11C11/56;G11C16/04;G11C16/10;G11C16/16;G11C16/34;H01L27/115 |
主分类号 |
G11C11/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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