发明名称 |
Fabricating method of an non-volatile memory |
摘要 |
A method of fabricating a non-volatile memory is provided. A substrate having a trench therein for forming a trench device is provided. Then, a doped metal silicide layer is formed on the substrate in the trench. A heating process is performed to form a source/drain area in the substrate under the doped metal silicide layer. Thereafter, a first conductive layer is formed on the doped metal silicide layer to fill up the trench.
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申请公布号 |
US7462537(B2) |
申请公布日期 |
2008.12.09 |
申请号 |
US20060309180 |
申请日期 |
2006.07.07 |
申请人 |
POWERCHIP SEMICONDUCTOR CORP. |
发明人 |
WANG PIN-YAO;LAI LIANG-CHUAN |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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