发明名称 |
Silicon-based light-emitting structure |
摘要 |
A silicon-based light emitting structure is formed as a high density array of light-emitting p-n junctions that substantially increases the intensity of the light emitted in a planar region. The p-n junctions are formed using standard CMOS processing methods, and emit light in response to applied voltages that generate avalanche breakdown and an avalanche current.
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申请公布号 |
US7462874(B1) |
申请公布日期 |
2008.12.09 |
申请号 |
US20060403516 |
申请日期 |
2006.04.13 |
申请人 |
NATIONAL SEMICONDUCTOR CORPORATION |
发明人 |
HOPPER PETER J.;LINDORFER PHILIPP;FRENCH WILLIAM;VASHCHENKO VLADISLAV |
分类号 |
H01L33/04;H01L33/08;H01L33/38 |
主分类号 |
H01L33/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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