| 发明名称 |
Method of manufacturing semiconductor device |
| 摘要 |
A substrate having a copper wiring is prepared. An insulating film is formed on the copper wiring. The insulating film is etched with a gas containing fluorine to form an opening reaching the copper wiring. A plasma treatment is carried out on a surface of copper exposed at a bottom of the opening without turning plasma discharge off after forming the opening in the same chamber as the formation of the opening.
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| 申请公布号 |
US7462565(B2) |
申请公布日期 |
2008.12.09 |
| 申请号 |
US20060489471 |
申请日期 |
2006.07.20 |
| 申请人 |
RENESAS TECHNOLOGY CORP. |
发明人 |
TABARU KENJI |
| 分类号 |
H01L21/302;H01L21/3065;H01L21/28;H01L21/311;H01L21/321;H01L21/768;H01L23/532 |
主分类号 |
H01L21/302 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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