发明名称 Semiconductor memory device
摘要 A CAM (Content Addressable Memory) cell includes first and second data storage portions storing data, horizontal port write gates for storing data applied through a match line pair in the data storage portions in a data write through a horizontal port, and search/read gates for driving the match lines of the match line pair in accordance with the data stored in the data storage portions in a search operation and in a data read through the horizontal port. The match lines are used as horizontal bit line pair, or signal lines for accessing the horizontal port. As the first and second data storage portions are used, it becomes possible to store ternary data, and accordingly, a write mask function of inhibiting a data write at a destination of data transfer is realized. Further, as the CAM cell is used, an arithmetic/logic operation following a search process can be executed selectively, and high speed data writing/reading becomes possible.
申请公布号 US7463501(B2) 申请公布日期 2008.12.09
申请号 US20060517441 申请日期 2006.09.08
申请人 RENESAS TECHNOLOGY CORP. 发明人 DOSAKA KATSUMI;ARIMOTO KAZUTAMI;SAITO KAZUNORI;NODA HIDEYUKI
分类号 G11C7/00 主分类号 G11C7/00
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