发明名称 |
Short circuit protection by gate voltage sensing |
摘要 |
A protection circuit monitors the gate voltage of an insulated gate bipolar transistor (IGBT) or metal oxide semiconductor field effect transistor (MOSFET) to protect the transistor during a time when it is being turned on. In one embodiment, the circuit monitors a transient gate voltage of the transistor when it is turned on. A short or overcurrent condition is detected when the gate voltage exceeds a delayed reference signal.
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申请公布号 |
US7463079(B2) |
申请公布日期 |
2008.12.09 |
申请号 |
US20060429345 |
申请日期 |
2006.05.05 |
申请人 |
HONEYWELL INTERNATIONAL INC. |
发明人 |
DE SUKUMAR;HATUA KAMALESH;RAJNE MILAN M R |
分类号 |
H03K17/30 |
主分类号 |
H03K17/30 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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