METHOD OF FABRICATION PN JUNCTION AND METHOD OF TESTING DEVICE USING THE SAME

摘要

The PN junction formation and PN joining formation process and device inspecting method using the same is provided to simplify the process by reducing the number of processes and to lower the breakdown voltage.. The PN joining formation process comprises as follows. A step is for forming the mask which exposes a part of the wafer(11) to form the local PN junction. A step is for introducing an N type impurity in the exposed domain of wafer by a diffusion method. A step is for introducing a p type impurity in wafer by an ion injection method. A step is for forming the PN junction by performing the thermal process for diffusing the impurity one time.