| 摘要 |
An avalanche photodiode according to this invention include a light receiving region 101 surrounded by a ring-shaped trench 13, a first electrode 11 formed on the light receiving region 101, a second electrode 12 formed on the periphery of the ring-shaped trench 13 surrounding the light receiving region, a first semiconductor layer lying just under the first electrode 11, and a second semiconductor layer lying just under the second electrode 12. Conductivity types of the first semiconductor and the second semiconductor are identical.
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