发明名称 |
Semiconductor devices having torsional stresses |
摘要 |
A FET structure is provided in which at least one stressor element provided at or near one corner of an active semiconductor region applies a stress in a first direction to one side of a channel region of the FET to apply a torsional stress to the channel region of the FET. In a particular embodiment, a second stressor element is provided at or near an opposite corner of the active semiconductor region to apply a stress in a second direction to an opposite side of a channel region of the FET, the second direction being opposite to the first direction. In this way, the first and second stressor elements cooperate together in applying a torsional stress to the channel region of the FET.
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申请公布号 |
US7462916(B2) |
申请公布日期 |
2008.12.09 |
申请号 |
US20060458461 |
申请日期 |
2006.07.19 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
WILLIAMS RICHARD Q.;CHIDAMBARRAO DURESETI;ELLIS-MONAGHAN JOHN J.;NARASIMHA SHREESH;NOWAK EDWARD J.;PEKARIK JOHN J. |
分类号 |
H01L29/76 |
主分类号 |
H01L29/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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